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VBE Technology Shenzhen Co., Ltd.
VBE Technology Shenzhen Co., Ltd.
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Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Product Details

Place of Origin: CHINA

Brand Name: VBE

Certification: ISO

Model Number: VBE10R5

Payment & Shipping Terms

Minimum Order Quantity: 1pcs

Packaging Details: Neutral Packing

Delivery Time: 5-8 working days

Supply Ability: 10K

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Specifications
High Light:

high power rf transistor

,

high frequency power transistor

Condition:
Brand New And Original
Condition:
Brand New And Original
Description
Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

 

 

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz 0

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz 1

 

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz 2

 

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz 3

 

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz 4

 

 

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz 5

 

 

 

 

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