VBE Technology Shenzhen Co., Ltd.

 

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Home ProductsRF Power Transistor

Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W

Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W

Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W
Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W

Large Image :  Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W Get Best Price

Product Details:

Place of Origin: CHINA
Brand Name: VBE
Certification: ISO
Model Number: VBE6006H

Payment & Shipping Terms:

Minimum Order Quantity: 1pcs
Packaging Details: Neutral Packing
Delivery Time: 5-8 working days
Supply Ability: 10K
Detailed Product Description
Condition: Brand New And Original
High Light:

high frequency power transistor

,

rf power amplifier transistor

Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W 0'

Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W 1

Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W 2

Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W 3

Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W 4

 

 

 

 

 

 

 

Contact Details
VBE Technology Shenzhen Co., Ltd.

Contact Person: sales

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