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Cell Phone Signal Jammer
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VBE Technology Shenzhen Co., Ltd.
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Wide Band HF To 1GHz 55W RF Power Transistor LDMOS FET 28V RoHs Compliant
Wide Band HF To 1GHz 55W RF Power Transistor LDMOS FET 28V RoHs Compliant
Wide Band HF To 1GHz 55W RF Power Transistor LDMOS FET 28V RoHs Compliant
Wide Band HF To 1GHz 55W RF Power Transistor LDMOS FET 28V RoHs Compliant

Wide Band HF To 1GHz 55W RF Power Transistor LDMOS FET 28V RoHs Compliant

Product Details

Place of Origin: CHINA

Brand Name: VBE

Certification: ISO

Model Number: VBE10R5

Payment & Shipping Terms

Minimum Order Quantity: 1pcs

Packaging Details: Neutral Packing

Delivery Time: 5-8 working days

Supply Ability: 10K

Get Best Price
Contact Now

Specifications

Description
Specifications
Highlight:

high power rf transistor

,

rf power amplifier transistor

Condition:
Brand New And Original
Condition:
Brand New And Original
Description
Wide Band HF To 1GHz 55W RF Power Transistor LDMOS FET 28V RoHs Compliant

 

Wide Band HF To 1GHz 55W RF Power Transistor LDMOS FET 28V RoHs Compliant 0Wide Band HF To 1GHz 55W RF Power Transistor LDMOS FET 28V RoHs Compliant 1

Wide Band HF To 1GHz 55W RF Power Transistor LDMOS FET 28V RoHs Compliant 2

 

 

 

Wide Band HF To 1GHz 55W RF Power Transistor LDMOS FET 28V RoHs Compliant 3

 

 

Wide Band HF To 1GHz 55W RF Power Transistor LDMOS FET 28V RoHs Compliant 4

 

 

 

 

Tags:

high power rf transistor,

rf power amplifier transistor,

high frequency power transistor

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Cell Phone Signal Jammer

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VBE Technology Shenzhen Co., Ltd.
vbe003@vbejammer.com
86-755-86239323
Floor 4, Building 8, Xinwei Industrial Zone, Nanshan District, Shenzhen, Guangdong Province, China
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