logo
VBE Technology Shenzhen Co., Ltd.
vbe003@vbejammer.com 86-755-86239323
Home
Products

Cell Phone Signal Jammer

Wifi Signal Jammer

Handheld Signal Jammer

Convoy Bomb Jammers

Prison Cell Phone Jammers

High Power Signal Jammer

Portable Signal Jammer

GPS Signal Jammer

Anti Drone Jammers

Drone Detectors

Mobile Phone Interception

RF Power Amplifier Module

Cell Phone Signal Repeater

Mobile Signal Booster

RF Signal Detector

RF Power Transistor

RF Passive Components

RF Antennas
About Us
Company Profile
Factory Tour
Quality Control
Contact Us
News
Shopping
english
english
français
Deutsch
Italiano
Русский
Español
português
Nederlandse
ελληνικά
日本語
한국
العربية
हिन्दी
Türkçe
bahasa indonesia
tiếng Việt
ไทย
বাংলা
فارسی
polski
quote
Home
Products
Cell Phone Signal Jammer
Wifi Signal Jammer
Handheld Signal Jammer
Convoy Bomb Jammers
Prison Cell Phone Jammers
High Power Signal Jammer
Portable Signal Jammer
GPS Signal Jammer
Anti Drone Jammers
Drone Detectors
Mobile Phone Interception
RF Power Amplifier Module
Cell Phone Signal Repeater
Mobile Signal Booster
RF Signal Detector
RF Power Transistor
RF Passive Components
RF Antennas
About Us
Company Profile
Factory Tour
Quality Control
Contact Us
News
news
Cases
Shopping
VBE Technology Shenzhen Co., Ltd.
products
Home /

products

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors
DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

Product Details

Place of Origin: CHINA

Brand Name: VBE

Certification: ISO

Model Number: VBE6006H

Payment & Shipping Terms

Minimum Order Quantity: 1pcs

Packaging Details: Neutral Packing

Delivery Time: 5-8 working days

Supply Ability: 10K

Get Best Price
Contact Now

Specifications

Description
Specifications
Highlight:

high frequency power transistor

,

rf power amplifier transistor

,

60W RF Power Transistor

Condition:
Brand New And Original
Condition:
Brand New And Original
Description
DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors 0

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors 1

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors 2

 

 

 

Tags:

high power rf transistor,

rf power amplifier transistor,

high frequency power transistor

Similar Products
Durable RF Power Transistor Wide Band DC To 6GHz 25W Gallium Nitride 28 Volt

Durable RF Power Transistor Wide Band DC To 6GHz 25W Gallium Nitride 28 Volt

Get Best Price
Wide Band 700-3600MHz 20W RF Power Transistor LDMOS FETs 28V Broad-Band LDMOS RF Transistor, High Power RF Transistors

Wide Band 700-3600MHz 20W RF Power Transistor LDMOS FETs 28V Broad-Band LDMOS RF Transistor, High Power RF Transistors

Get Best Price
Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Get Best Price
Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W

Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W

Get Best Price
700-1000MHz LDMOS FETs RF High Power Transistors 28V 260W With Integrated ESD Protection

700-1000MHz LDMOS FETs RF High Power Transistors 28V 260W With Integrated ESD Protection

Get Best Price
Wide Band HF To 1GHz 55W RF Power Transistor LDMOS FET 28V RoHs Compliant

Wide Band HF To 1GHz 55W RF Power Transistor LDMOS FET 28V RoHs Compliant

Get Best Price
Gallium Nitride 28V RF Power Transistor Wide Band 700 To 5000MHz 25W Long Lifespan

Gallium Nitride 28V RF Power Transistor Wide Band 700 To 5000MHz 25W Long Lifespan

Get Best Price
DC To 8GHz 6W Rf Transistor Amplifier Gallium Nitride 28V Original New Condition

DC To 8GHz 6W Rf Transistor Amplifier Gallium Nitride 28V Original New Condition

Get Best Price
ISO Approval High Frequency Power Transistor Wide Band 700 To 6000MHz 15 Watt

ISO Approval High Frequency Power Transistor Wide Band 700 To 6000MHz 15 Watt

Get Best Price
Send your inquiry
Please send us your request and we will reply to you as soon as possible.
Send
about
Company Profile
Factory Tour
Quality Control
Contact Us
Sitemap
Privacy Policy
products

Cell Phone Signal Jammer

Wifi Signal Jammer

Handheld Signal Jammer

Convoy Bomb Jammers

Prison Cell Phone Jammers

High Power Signal Jammer

Contact Us
VBE Technology Shenzhen Co., Ltd.
vbe003@vbejammer.com
86-755-86239323
Floor 4, Building 8, Xinwei Industrial Zone, Nanshan District, Shenzhen, Guangdong Province, China
China Good Quality Cell Phone Signal Jammer Supplier. Copyright © 2025 VBE Technology Shenzhen Co., Ltd. . All Rights Reserved.