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Home ProductsRF Power Transistor

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

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China VBE Technology Shenzhen Co., Ltd. certification
China VBE Technology Shenzhen Co., Ltd. certification

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors
DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

Large Image :  DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors Get Best Price

Product Details:

Place of Origin: CHINA
Brand Name: VBE
Certification: ISO
Model Number: VBE6006H

Payment & Shipping Terms:

Minimum Order Quantity: 1pcs
Packaging Details: Neutral Packing
Delivery Time: 5-8 working days
Supply Ability: 10K
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Detailed Product Description
Condition: Brand New And Original
High Light:

high frequency power transistor

,

rf power amplifier transistor

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors 0

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors 1

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