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DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors
DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

Product Details

Place of Origin: CHINA

Brand Name: VBE

Certification: ISO

Model Number: VBE6006H

Payment & Shipping Terms

Minimum Order Quantity: 1pcs

Packaging Details: Neutral Packing

Delivery Time: 5-8 working days

Supply Ability: 10K

Get Best Price
Contact Now

Specifications

Description
Specifications
High Light:

high frequency power transistor

,

rf power amplifier transistor

,

60W RF Power Transistor

Condition:
Brand New And Original
Condition:
Brand New And Original
Description
DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors 0

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors 1

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors 2

 

 

 

Tags:

high power rf transistor,

rf power amplifier transistor,

high frequency power transistor

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Cell Phone Signal Jammer

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vbe003@vbejammer.com
86-755-86239323
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