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Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W
Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W

Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W

Product Details

Place of Origin: CHINA

Brand Name: VBE

Certification: ISO

Model Number: VBE6006H

Payment & Shipping Terms

Minimum Order Quantity: 1pcs

Packaging Details: Neutral Packing

Delivery Time: 5-8 working days

Supply Ability: 10K

Get Best Price
Contact Now

Specifications

Description
Specifications
High Light:

high frequency power transistor

,

rf power amplifier transistor

Condition:
Brand New And Original
Condition:
Brand New And Original
Description
Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W

Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W 0'

Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W 1

Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W 2

Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W 3

Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W 4

 

 

 

 

 

 

 

Tags:

high power rf transistor,

rf power amplifier transistor,

high frequency power transistor

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Cell Phone Signal Jammer

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vbe003@vbejammer.com
86-755-86239323
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