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DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors
DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

Large Image :  DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors Get Best Price

Product Details:
Place of Origin: CHINA
Brand Name: VBE
Certification: ISO
Model Number: VBE6006H
Payment & Shipping Terms:
Minimum Order Quantity: 1pcs
Packaging Details: Neutral Packing
Delivery Time: 5-8 working days
Supply Ability: 10K
Detailed Product Description
Condition: Brand New And Original
High Light:

high frequency power transistor

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rf power amplifier transistor

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors 0

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors 1

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors 2

 

 

 

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VBE Technology Shenzhen Co., Ltd.

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Tel: +8613794498013

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