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700-1000MHz LDMOS FETs RF High Power Transistors 28V 260W With Integrated ESD Protection
700-1000MHz LDMOS FETs RF High Power Transistors 28V 260W With Integrated ESD Protection
700-1000MHz LDMOS FETs RF High Power Transistors 28V 260W With Integrated ESD Protection
700-1000MHz LDMOS FETs RF High Power Transistors 28V 260W With Integrated ESD Protection
700-1000MHz LDMOS FETs RF High Power Transistors 28V 260W With Integrated ESD Protection
700-1000MHz LDMOS FETs RF High Power Transistors 28V 260W With Integrated ESD Protection

700-1000MHz LDMOS FETs RF High Power Transistors 28V 260W With Integrated ESD Protection

Product Details

Place of Origin: CHINA

Brand Name: VBE

Certification: ISO

Model Number: VBE09260B2

Payment & Shipping Terms

Minimum Order Quantity: 1pcs

Packaging Details: Neutral Packing

Delivery Time: 5-8 working days

Supply Ability: 10K

Get Best Price
Contact Now

Specifications

Description
Specifications
High Light:

high power rf transistor

,

high frequency power transistor

Condition:
Brand New And Original
Condition:
Brand New And Original
Description
700-1000MHz LDMOS FETs RF High Power Transistors 28V 260W With Integrated ESD Protection

700-1000MHz LDMOS FETs RF High Power Transistors 28V 260W With Integrated ESD Protection 0

 

700-1000MHz LDMOS FETs RF High Power Transistors 28V 260W With Integrated ESD Protection 1

700-1000MHz LDMOS FETs RF High Power Transistors 28V 260W With Integrated ESD Protection 2

 

 

 

 

 

 

 

 

 

Tags:

high power rf transistor,

rf power amplifier transistor,

high frequency power transistor

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Cell Phone Signal Jammer

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VBE Technology Shenzhen Co., Ltd.
vbe003@vbejammer.com
86-755-86239323
Floor 4, Building 8, Xinwei Industrial Zone, Nanshan District, Shenzhen, Guangdong Province, China
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