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DC To 8GHz 6W Rf Transistor Amplifier Gallium Nitride 28V Original New Condition
DC To 8GHz 6W Rf Transistor Amplifier Gallium Nitride 28V Original New Condition
DC To 8GHz 6W Rf Transistor Amplifier Gallium Nitride 28V Original New Condition
DC To 8GHz 6W Rf Transistor Amplifier Gallium Nitride 28V Original New Condition
DC To 8GHz 6W Rf Transistor Amplifier Gallium Nitride 28V Original New Condition
DC To 8GHz 6W Rf Transistor Amplifier Gallium Nitride 28V Original New Condition

DC To 8GHz 6W Rf Transistor Amplifier Gallium Nitride 28V Original New Condition

Product Details

Place of Origin: CHINA

Brand Name: VBE

Certification: ISO

Model Number: VBE80R6H

Payment & Shipping Terms

Minimum Order Quantity: 1pcs

Packaging Details: Neutral Packing

Delivery Time: 5-8 working days

Supply Ability: 10K

Get Best Price
Contact Now

Specifications

Description
Specifications
High Light:

high power rf transistor

,

rf power amplifier transistor

Condition:
Brand New And Original
Condition:
Brand New And Original
Description
DC To 8GHz 6W Rf Transistor Amplifier Gallium Nitride 28V Original New Condition

DC To 8GHz 6W Rf Transistor Amplifier Gallium Nitride 28V Original New Condition 0

 

DC To 8GHz 6W Rf Transistor Amplifier Gallium Nitride 28V Original New Condition 1

DC To 8GHz 6W Rf Transistor Amplifier Gallium Nitride 28V Original New Condition 2

 

DC To 8GHz 6W Rf Transistor Amplifier Gallium Nitride 28V Original New Condition 3

 

 

 

 

 

Tags:

high power rf transistor,

rf power amplifier transistor,

high frequency power transistor

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Cell Phone Signal Jammer

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VBE Technology Shenzhen Co., Ltd.
vbe003@vbejammer.com
86-755-86239323
Floor 4, Building 8, Xinwei Industrial Zone, Nanshan District, Shenzhen, Guangdong Province, China
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