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Cell Phone Signal Jammer
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Durable RF Power Transistor Wide Band DC To 6GHz 25W Gallium Nitride 28 Volt
Durable RF Power Transistor Wide Band DC To 6GHz 25W Gallium Nitride 28 Volt

Durable RF Power Transistor Wide Band DC To 6GHz 25W Gallium Nitride 28 Volt

Product Details

Place of Origin: CHINA

Brand Name: VBE

Certification: ISO

Model Number: VBE6003H

Payment & Shipping Terms

Minimum Order Quantity: 1pcs

Packaging Details: Neutral Packing

Delivery Time: 5-8 working days

Supply Ability: 10K

Get Best Price
Contact Now

Specifications

Description
Specifications
Highlight:

high power rf transistor

,

high frequency power transistor

,

RF Power Transistor Wide Band

Condition:
Brand New And Original
Condition:
Brand New And Original
Description
Durable RF Power Transistor Wide Band DC To 6GHz 25W Gallium Nitride 28 Volt

 

Durable RF Power Transistor Wide Band DC To 6GHz 25W Gallium Nitride 28 Volt 0

Durable RF Power Transistor Wide Band DC To 6GHz 25W Gallium Nitride 28 Volt 1

Durable RF Power Transistor Wide Band DC To 6GHz 25W Gallium Nitride 28 Volt 2

Durable RF Power Transistor Wide Band DC To 6GHz 25W Gallium Nitride 28 Volt 3

Tags:

high power rf transistor,

rf power amplifier transistor,

high frequency power transistor

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Cell Phone Signal Jammer

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VBE Technology Shenzhen Co., Ltd.
vbe003@vbejammer.com
86-755-86239323
Floor 4, Building 8, Xinwei Industrial Zone, Nanshan District, Shenzhen, Guangdong Province, China
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