VBE Technology Shenzhen Co., Ltd.

 

Professional RF solutions provider!
Sales & Support
Request A Quote - Email
Select Language
English
French
German
Italian
Russian
Spanish
Portuguese
Dutch
Greek
Japanese
Korean
Arabic
Hindi
Turkish
Indonesian
Vietnamese
Thai
Bengali
Persian
Polish
Home
Products
About Us
Factory Tour
Quality Control
Contact Us
Request A Quote
News
Home ProductsRF Power Transistor

Durable RF Power Transistor Wide Band DC To 6GHz 25W Gallium Nitride 28 Volt

All Products
Cell Phone Signal Jammer (42)
Wifi Signal Jammer (12)
Handheld Signal Jammer (36)
Convoy Bomb Jammers (21)
Prison Cell Phone Jammers (11)
High Power Signal Jammer (15)
Portable Signal Jammer (14)
GPS Signal Jammer (14)
Anti Drone Jammers (10)
RF Power Amplifier Module (13)
Cell Phone Signal Repeater (16)
Mobile Signal Booster (7)
RF Signal Detector (5)
RF Power Transistor (10)
Mobile Phone Interception (6)
RF Passive Components (6)
RF Antennas (5)
I'm Online Chat Now
China VBE Technology Shenzhen Co., Ltd. certification
China VBE Technology Shenzhen Co., Ltd. certification

Durable RF Power Transistor Wide Band DC To 6GHz 25W Gallium Nitride 28 Volt

Durable RF Power Transistor Wide Band DC To 6GHz 25W Gallium Nitride 28 Volt
Durable RF Power Transistor Wide Band DC To 6GHz 25W Gallium Nitride 28 Volt

Large Image :  Durable RF Power Transistor Wide Band DC To 6GHz 25W Gallium Nitride 28 Volt Get Best Price

Product Details:
Place of Origin: CHINA
Brand Name: VBE
Certification: ISO
Model Number: VBE6003H
Payment & Shipping Terms:
Minimum Order Quantity: 1pcs
Packaging Details: Neutral Packing
Delivery Time: 5-8 working days
Supply Ability: 10K
Contact Now
Detailed Product Description
Condition: Brand New And Original
High Light:

high power rf transistor

,

high frequency power transistor

 

Durable RF Power Transistor Wide Band DC To 6GHz 25W Gallium Nitride 28 Volt 0

Durable RF Power Transistor Wide Band DC To 6GHz 25W Gallium Nitride 28 Volt 1

Durable RF Power Transistor Wide Band DC To 6GHz 25W Gallium Nitride 28 Volt 2

Durable RF Power Transistor Wide Band DC To 6GHz 25W Gallium Nitride 28 Volt 3

Tag:

high power rf transistor,

rf power amplifier transistor,

high frequency power transistor

Contact Details
VBE Technology Shenzhen Co., Ltd.

Contact Person: sales

Tel: +8613794498013

Send your inquiry directly to us
About Us
Cell Phone Signal Jammer
Prison Cell Phone Jammers
Portable Signal Jammer
Contact Us
Mobile Site
Privacy Policy | China Good Quality Cell Phone Signal Jammer Supplier. © 2018 - 2022 vbejammer.com. All Rights Reserved.